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An approach to determining parasitic elements for laser diodes
Author(s) -
Jianjun Gao,
Baoxin Gao,
Bo Pan,
Chunguang Liang
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10414
Subject(s) - microwave , diode , laser , laser diode , point (geometry) , optoelectronics , simple (philosophy) , electronic engineering , materials science , optics , physics , engineering , telecommunications , mathematics , philosophy , geometry , epistemology
A simple way to extract the parasitic elements of the laser diode model is proposed. The parasitic elements are determined by directly using measured S 11 parameters versus frequency at zero bias point and above threshold current bias point. Thus the need for optimization during the extraction is reduced, and excellent agreement has been achieved between the experimental and calculated results. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 191–193, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10414