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Study of spiral inductors using Cu/low‐ k interconnect for high‐performance radio‐frequency integrated circuit (RF‐IC) applications
Author(s) -
Lin YoSheng,
Hsu HumMing
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10368
Subject(s) - inductor , cmos , radio frequency , interconnection , equivalent series resistance , rfic , materials science , electrical engineering , microwave , q factor , optoelectronics , substrate (aquarium) , engineering , telecommunications , resonator , oceanography , voltage , geology
Spiral inductors with various turn numbers fabricated with the use of leading‐edge 0.13‐μm mixed‐signal/RF CMOS technology with 193‐nm lithography and Cu/low‐k interconnect are described in this article. It is shown that quality (Q) factor decreased and increased with increasing temperature at low frequency and high frequency, respectively. This phenomenon can be explained by the positive temperature coefficients of the metal series resistance (R s ) and the substrate resistance (R sub ). © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 43–48, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10368