A simple approach including gate leakage for calculating the minimum noise figure of GaN HEMTs | Zendy

Oxley C. H. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

A simple approach including gate leakage for calculating the minimum noise figure of GaN HEMTs

Author(s) -

Oxley C. H.

Publication year - 2002

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10245

Subject(s) - high electron mobility transistor , leakage (economics) , microwave , noise figure , simple (philosophy) , noise (video) , optoelectronics , electronic engineering , electrical engineering , engineering , materials science , computer science , transistor , telecommunications , cmos , amplifier , philosophy , epistemology , voltage , artificial intelligence , economics , image (mathematics) , macroeconomics

The article presents a simple noise equation for the first time, including a contribution from the gate leakage, which accurately predicts the experimentally observed relatively flat minimum noise figure NF min for a GaN HEMT with frequency, published by Lu et al. [1] © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 113–115, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10245

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research