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A simple approach including gate leakage for calculating the minimum noise figure of GaN HEMTs
Author(s) -
Oxley C. H.
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10245
Subject(s) - high electron mobility transistor , leakage (economics) , microwave , noise figure , simple (philosophy) , noise (video) , optoelectronics , electronic engineering , electrical engineering , engineering , materials science , computer science , transistor , telecommunications , cmos , amplifier , philosophy , epistemology , voltage , artificial intelligence , economics , image (mathematics) , macroeconomics
The article presents a simple noise equation for the first time, including a contribution from the gate leakage, which accurately predicts the experimentally observed relatively flat minimum noise figure NF min for a GaN HEMT with frequency, published by Lu et al. [1] © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 113–115, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10245