Low‐noise one‐port microwave transistor amplifier | Zendy

Venguer A. P. | Zendy; Medina J. L. | Zendy; Chávez R. | Zendy; Velázquez A. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Low‐noise one‐port microwave transistor amplifier

Author(s) -

Venguer A. P.,

Medina J. L.,

Chávez R.,

Velázquez A.

Publication year - 2002

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10236

Subject(s) - amplifier , noise figure , electrical engineering , low noise amplifier , fet amplifier , effective input noise temperature , direct coupled amplifier , engineering , electronic engineering , transistor , circulator , linear amplifier , transistor array , y factor , rf power amplifier , operational amplifier , cmos , voltage

A new type of a microwave reflection amplifier with very low noise properties is presented. The proposed amplifier consists of a circulator and a one‐port circuit with the use of a transistor operating under negative resistance conditions. An expression for estimating the noise figure for this type of amplifier is proposed. Experimental results show that such a class of amplifiers that use only one transistor provides a higher transmission gain and a smaller noise figure than a conventional single‐stage amplifier, making it interesting to operate at millimeter‐wave frequencies. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 100–104, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10236

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research