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Fast computation of FET power gains
Author(s) -
Paoloni Claudio
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10235
Subject(s) - simple (philosophy) , computation , amplifier , microwave , power gain , power (physics) , electronic engineering , set (abstract data type) , computer science , electrical engineering , engineering , physics , algorithm , telecommunications , cmos , quantum mechanics , philosophy , epistemology , programming language
Power gain definitions are fundamental parameters in the design of FET small‐signal amplifiers. In this Letter, a simple and direct method to compute the various gain definitions of FET up to 60 GHz is demonstrated. A set of simple equations to compute the S parameters from the FET complete π model are used. The power gain definitions are calculated from the S‐parameter modules derived from these equations. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 104–106, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10235

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