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Parasitic element dependent scattering parameter evaluation of GaN MESFET
Author(s) -
Singh Adarsh,
Bose Srikanta,
Gupta Mridula,
Gupta R. S.
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10230
Subject(s) - mesfet , scattering parameters , microwave , parasitic element , scattering , materials science , optoelectronics , physics , optics , transistor , electrical engineering , engineering , telecommunications , field effect transistor , voltage
Analytical expressions for parasitic‐element‐dependent scattering parameters of a non‐self‐aligned GaN MESFET are evaluated and their variation with frequency is shown. Maximum stable gain and maximum transducer power gain of the device are also evaluated and it is found that a GaN MESFET with the dimensions (1.5 × 100 μm) has maximum stable gain of about 13 dB. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 54–57, 2002; DOI 10.1002/mop.10230