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Millimeter‐wave down‐converter conversion gain performance enhancement
Author(s) -
Brabetz T.,
Fusco V. F.
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10189
Subject(s) - high electron mobility transistor , inductance , microwave , electrical engineering , extremely high frequency , electronic circuit , millimeter , voltage , electronic engineering , engineering , topology (electrical circuits) , optoelectronics , materials science , transistor , physics , telecommunications , optics
The influence of via hole inductance on millimeter‐wave single‐ended pHEMT gate‐mixer down‐converter conversion gain is examined by a closed formula and by measurement. It is shown that feedback inductance acts as a voltage divider, reducing the conversion gain and increasing the LO power requirements. Analytical considerations presented in the paper predict that this effect can reduce the conversion gain by up to 9 dB. Additionally, a method to minimize the influence of via hole inductance on mixer performance is presented. Two circuits, one with and one without resonating stubs, have been manufactured and tested. The new circuit exhibits 3.5 dB more conversion gain than the classical topology, RF 65.3 GHz, nominal IF 1.3 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 32: 399–400, 2002.