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Design and simulation of a 2×2 N SOI optical power splitter
Author(s) -
Tsao ShyhLin,
Peng PengChun
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10162
Subject(s) - silicon on insulator , splitter , beam propagation method , optical power , optics , wafer , fiber optic splitter , beam splitter , materials science , waveguide , power (physics) , optoelectronics , microwave , silicon , optical fiber , physics , engineering , telecommunications , refractive index , laser , fiber optic sensor , quantum mechanics
A 2×2 N optical power splitter is designed on a two‐layer silicon‐on‐insulator (SOI) wafer that offers the flexible design of the optical power‐splitting ratio. The lateral power‐splitting ratio is designed by adjusting the multimode interference region. The vertical power‐splitting ratio is designed by varying the gap distance between the two SOI layers. We use the beam propagation method to simulate the light propagation in such a two‐layer optical waveguide. The total insertion loss 1.01 dB of a 2×32 optical power splitter with 0.2 mm×8.7 mm size is demonstrated by beam propagation simulations. © 2002 John Wiley & Sons, Inc. Microwave Opt Technol Lett 32: 307–310, 2002.