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Model for optically biased short‐channel GaAs MESFET
Author(s) -
Bose Srikanta,
Gupta Ritesh,
Gupta Mridula,
Gupta R. S.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10113
Subject(s) - mesfet , microwave , channel (broadcasting) , optoelectronics , voltage , electronic engineering , materials science , engineering , physics , transistor , electrical engineering , field effect transistor , telecommunications
An analytical model for an optically biased nonself‐aligned short‐channel GaAs MESFET is developed by solving the two‐dimensional Poisson's equation using a Green's function technique to obtain an optical radiation‐dependent threshold‐voltage expression incorporating the drain‐induced barrier lowering (DIBL), an important short‐channel effect. The developed model, being analytical, can be suitably used for simulation purposes in monolithic microwave integrated circuits using an optically biased MESFET for high‐frequency optical communication systems. © 2002 John Wiley & Sons, Inc. Microwave Opt Technol Lett 32: 138–142, 2002.