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Impact of process parameters in 40 GHz traveling‐wave amplifiers
Author(s) -
D'agostino Stefano,
Paoloni Claudio
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10052
Subject(s) - amplifier , microwave , wideband , electrical engineering , engineering , monolithic microwave integrated circuit , process (computing) , electronic engineering , traveling wave , power (physics) , telecommunications , physics , cmos , computer science , mathematics , mathematical analysis , quantum mechanics , operating system
A study on the impact of the variation of the technology process parameters on the performance of a 40 GHz MMIC traveling‐wave amplifier is proposed. In particular, the behavior of the output power as a function of the controllable parameters of the technology process, such as gate length, doping of the active zone, height, and dielectric constant of the substrate, is investigated. The comprehension of the contribution of the various process parameters to the final performance of a wideband traveling‐wave amplifier and their possible tuning are important factors to attain the design requirements. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 421–423, 2001.