An accurate 2‐D model for transconductance‐to‐current ratio and drain conductance of vertical surrounding‐gate (VSG) MOSFETs for microwave circuit applications | Zendy

Kranti Abhinav | Zendy; Haldar S. | Zendy; Gupta R. S. | Zendy

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An accurate 2‐D model for transconductance‐to‐current ratio and drain conductance of vertical surrounding‐gate (VSG) MOSFETs for microwave circuit applications

Author(s) -

Kranti Abhinav,

Haldar S.,

Gupta R. S.

Publication year - 2001

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10051

Subject(s) - transconductance , conductance , mosfet , microwave , current (fluid) , electrical engineering , drain induced barrier lowering , optoelectronics , computational physics , physics , materials science , threshold voltage , voltage , transistor , engineering , condensed matter physics , quantum mechanics

An accurate analytical model for the transconductance‐to‐current ratio ( g m / I ds ), current–voltage characteristics, and drain conductance is developed for a vertical surrounding‐gate (VSG) MOSFET based on the solution of the 2‐D Poisson's equation. The dependence of g m / I ds , drain current, and drain conductance on key technological parameters has been analyzed in detail. A design rule to select the device parameters to enhance g m / I ds is proposed. Results show that higher values of g m / I ds can be achieved in VSG MOSFETs as compared to DG MOSFETs. Close agreement with simulated results confirms the validity of the present model. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 415–421, 2001.

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