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An accurate 2‐D model for transconductance‐to‐current ratio and drain conductance of vertical surrounding‐gate (VSG) MOSFETs for microwave circuit applications
Author(s) -
Kranti Abhinav,
Haldar S.,
Gupta R. S.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10051
Subject(s) - transconductance , conductance , mosfet , microwave , current (fluid) , electrical engineering , drain induced barrier lowering , optoelectronics , computational physics , physics , materials science , threshold voltage , voltage , transistor , engineering , condensed matter physics , quantum mechanics
An accurate analytical model for the transconductance‐to‐current ratio ( g m / I ds ), current–voltage characteristics, and drain conductance is developed for a vertical surrounding‐gate (VSG) MOSFET based on the solution of the 2‐D Poisson's equation. The dependence of g m / I ds , drain current, and drain conductance on key technological parameters has been analyzed in detail. A design rule to select the device parameters to enhance g m / I ds is proposed. Results show that higher values of g m / I ds can be achieved in VSG MOSFETs as compared to DG MOSFETs. Close agreement with simulated results confirms the validity of the present model. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 415–421, 2001.