Quasiclass‐F high‐efficiency power amplifier for wireless handset application using GaAs enhancement HJFET

A new linear high‐efficiency multichip module power amplifier (MCM PA) with 0.1 cm 3 volume for TDMA cellular handset applications is developed using an E ‐mode GaAs HJFET. Operating from a 3.5 V dc single‐polarity supply, the amplifier is targeted at a PAE of 55% for TDMA applications. The measured results indicate the attractiveness and advisability of the E ‐mode GaAs HJFET used for cellular handset applications, and final output characteristics validate the proposed quasiclass‐ F power amplifier design procedure. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 409–411, 2001.