Quasiclass‐F high‐efficiency power amplifier for wireless handset application using GaAs enhancement HJFET | Zendy

Geng H. | Zendy; Hasegawa Y. | Zendy

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Quasiclass‐F high‐efficiency power amplifier for wireless handset application using GaAs enhancement HJFET

Author(s) -

Geng H.,

Hasegawa Y.

Publication year - 2001

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10049

Subject(s) - handset , amplifier , electrical engineering , engineering , microwave , rf power amplifier , power (physics) , electronic engineering , wireless , telecommunications , physics , cmos , quantum mechanics

A new linear high‐efficiency multichip module power amplifier (MCM PA) with 0.1 cm 3 volume for TDMA cellular handset applications is developed using an E ‐mode GaAs HJFET. Operating from a 3.5 V dc single‐polarity supply, the amplifier is targeted at a PAE of 55% for TDMA applications. The measured results indicate the attractiveness and advisability of the E ‐mode GaAs HJFET used for cellular handset applications, and final output characteristics validate the proposed quasiclass‐ F power amplifier design procedure. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 409–411, 2001.

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