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Quasiclass‐F high‐efficiency power amplifier for wireless handset application using GaAs enhancement HJFET
Author(s) -
Geng H.,
Hasegawa Y.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10049
Subject(s) - handset , amplifier , electrical engineering , engineering , microwave , rf power amplifier , power (physics) , electronic engineering , wireless , telecommunications , physics , cmos , quantum mechanics
Abstract A new linear high‐efficiency multichip module power amplifier (MCM PA) with 0.1 cm 3 volume for TDMA cellular handset applications is developed using an E ‐mode GaAs HJFET. Operating from a 3.5 V dc single‐polarity supply, the amplifier is targeted at a PAE of 55% for TDMA applications. The measured results indicate the attractiveness and advisability of the E ‐mode GaAs HJFET used for cellular handset applications, and final output characteristics validate the proposed quasiclass‐ F power amplifier design procedure. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 409–411, 2001.