Premium
Admittance parameter and unilateral power‐gain evaluation of GaN MESFET for microwave circuit applications
Author(s) -
Singh Adarsh,
Bose Srikanta,
Gupta Mridula,
Gupta R. S.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10043
Subject(s) - mesfet , cutoff frequency , microwave , oscillation (cell signaling) , admittance , admittance parameters , power (physics) , optoelectronics , power gain , physics , equivalent circuit , electrical engineering , materials science , electronic engineering , voltage , engineering , transistor , electrical impedance , field effect transistor , telecommunications , chemistry , amplifier , biochemistry , cmos , quantum mechanics
Abstract The admittance parameters and unilateral power gain of a nonself‐aligned GaN MESFET incorporating the parasitic elements along with gate‐length modulation are evaluated analytically in the present model. The cutoff frequency of the maximum available gain and the maximum frequency of oscillation are also determined in the model. For a GaN MESFET (4 μm×100 μm), the maximum frequency of oscillation is obtained to be about 2 GHz at zero gate bias. Using the present model, a unilateral power gain of 18 dB is predicted for the device. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 387–393, 2001.