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Modeling and measuring the reflection and transmission of a silicon wafer in the X ‐ and Ka‐bands under illumination of light in a closed waveguide structure
Author(s) -
Hajian M.,
Heijnen S. H.,
Groen F.,
Hakkert P.,
Ligthart L. P.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10031
Subject(s) - wafer , optics , microwave , semiconductor , materials science , reflection (computer programming) , optoelectronics , waveguide , silicon , laser , transmission (telecommunications) , reflection loss , electrical engineering , physics , engineering , telecommunications , computer science , programming language
In the past two years, extensive research has been carried out at IRCTR (International Research Centre for Telecommunication‐Transmission and Radar) in order to analyze and model the reflection and transmission coefficients of a semiconductor, i.e., doped silicon, under illumination of light. It was found that the characteristics of the semiconductor material could substantially be changed once it is illuminated with light. This property of the semiconductor material can be used to realize a nonmechanical beam deflector that can form and scan a beam of millimeter‐wave (MMW) radiation at a rapid rate. The preliminary measurements in a closed waveguide structure show that there is a total reflection of MMW and microwave (MW) power after the laser is turned on. The laser light causes a considerable change in the equivalent conductivity of the silicon wafer, changing it from an insulator to a good conductor. The reflection and transmission are modeled using the S–T matrix of the total microwave network. There is a good similarity in the behavior of the theoretical and measurement results. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 349–353, 2001.