Premium
Composite‐channel In 0. 17 Al 0 . 83 N /In 0. 1 Ga 0 . 9 N / GaN /Al 0. 04 Ga 0 . 96 N high electron mobility transistors for RF applications
Author(s) -
A. Revathy,
C. S. Boopathi
Publication year - 2021
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22775
Subject(s) - transconductance , materials science , high electron mobility transistor , optoelectronics , transistor , breakdown voltage , sapphire , electron mobility , electrical engineering , voltage , physics , optics , laser , engineering
In this work, we present the high performance of composite channel based In 0.17 Al 0.83 N/In 0.1 Ga 0.9 N/GaN/Al 0.04 Ga 0.96 N high electron mobility transistors (HEMTs) on a sapphire substrate. A numerical simulation is carried out for the proposed and conventional GaN channel‐based HEMTs using TCAD. Due to the strong polarization of InAlN/InGaN, enhanced electron confinement and high electron mobility of composite channel based proposed device shows excellent DC and RF characteristics with improved linearity than conventional GaN channel based HEMTs. A 55 nm T‐gate device demonstrates 4.45 A/mm drain current density (I DS ) at V GS = 0 V, 0.7 S/mm stable transconductance (G M ) for a wide range of gate bias, and excellent F T / F max of 274/288 GHz. Benefiting from the Al 0.04 Ga 0.96 N buffer (back‐barrier), the device shows a very low sub‐threshold drain leakage current and high breakdown voltage ( V BR ) of 43.5 V. The combination of high F T / F max , stable transconductance, and high breakdown voltage of the proposed HEMTs shows the great promise for high power and wide‐bandwidth millimeter‐wave applications.