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Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate
Author(s) -
Houadef Ali,
Djezzar Boualem
Publication year - 2021
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22755
Subject(s) - ldmos , transconductance , transistor , materials science , photolithography , optoelectronics , electrical engineering , photoresist , leakage (economics) , breakdown voltage , amplifier , voltage , cmos , nanotechnology , engineering , layer (electronics) , economics , macroeconomics
In this article, we investigate by TCAD simulation, the combination triple reduced surface field (triple‐RESURF) and trenched‐gate to design an n‐type laterally diffused metal‐oxide‐semiconductor (LDMOS) transistor with high performance. While similar structures reported in the literature, on the one hand, use either the triple‐RESURF or trenched‐gate at once, on the other hand, those features require at least one additional mask each. We have been able to achieve both features in one transistor with only eight masks at the front‐end of line (FEOL), and one less annealing. Therefore, our proposition will be cheaper and provide better performance. The structure is obtained by re‐organizing the process steps, re‐using other existing masks, and exploiting positive and negative photoresist photolithography. The resulting specific on‐state resistance ( R ON,SP ) is 94 mΩmm 2 , and the breakdown voltage (BV) is 71 V. But, most importantly a high transconductance ( g m ) at high gate voltages, with acceptable off‐state leakage current ( I off ), which translates into better RF performance overall than what is reported in the literature. The maximum oscillation frequency ( f MAX ) and cut‐off frequency ( f T ) could reach up to 76 and 43 GHz, respectively. Our device targets fully integrated IoT ASICs that require power amplifiers.