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A design of 1 to 4 GHz broadband high‐efficiency power amplifier with two‐way concurrent active load modulation method
Author(s) -
You Fei,
Peng Jun,
Li Chuan,
Shen Ce,
He Songbai
Publication year - 2021
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22640
Subject(s) - amplifier , waveform , modulation (music) , active load , bandwidth (computing) , electronic engineering , harmonic , power added efficiency , broadband , load pull , power (physics) , computer science , rf power amplifier , electrical engineering , transistor , engineering , telecommunications , physics , acoustics , voltage , quantum mechanics
Active load modulation and harmonic injection can be used to boost the power amplifier's (PA) efficiency, but these techniques must add a fundamental external source or a harmonic generator. In this paper, a two‐way power amplifier architecture is introduced to extend high‐efficiency operation bandwidth by utilizing concurrent active load modulation with a waveform mapping method. Active load modulation is realized in between the two branches with the aid of independent input amplitude and phase control. Based on a calculated waveform database, high‐efficiency operations for both transistors from 1 to 4 GHz are designed in a self‐defined optimization platform considering waveform distance and input parameters. Finally, this PA is fabricated and measured to offer 41.6 to 45.0 dBm power, 8.2 to 11.7 dB gain, and 56% to 89% drain efficiency from 0.85 to 3.85 GHz.