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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors
Author(s) -
Du Xuekun,
Helaoui Mohamed,
Cai Jialin,
Liu Jun,
Ghannouchi Fadhel M.
Publication year - 2021
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22562
Subject(s) - high electron mobility transistor , transistor , materials science , optoelectronics , capacitance , small signal model , particle swarm optimization , signal (programming language) , biological system , computer science , voltage , physics , electrode , electrical engineering , algorithm , engineering , biology , quantum mechanics , programming language
An improved hybrid parameter‐extraction technique is proposed for the small‐signal modeling application in AlGaN/GaN high electron mobility transistors (HEMTs). The capacitance partitioning characteristics of cold pinch‐off GaN device with non‐field‐plate and field‐plate structures are reinvestigated and the scanning range of parasitic capacitances C pg and C pd is determined. A systematic optimization approach is proposed to obtain the initial values of C pg and C pd . By using the global optimization algorithm, particle swarm optimization, the reliable parasitic parameters can be acquired based on the proposed error function. The validity of the developed hybrid parameter‐extraction method is verified by 2 × 100 μm AlGaN/GaN HEMT with source‐connected FP structure from 0.1 to 40 GHz among the 442 biasing points.