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Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs
Author(s) -
Alim Mohammad A.,
Ali Mayahsa M.,
Gaquiere Christophe
Publication year - 2021
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22513
Subject(s) - intermodulation , distortion (music) , nonlinear distortion , biasing , nonlinear system , third order , figure of merit , telecommunications , physics , computer science , optics , voltage , law , amplifier , quantum mechanics , bandwidth (computing) , political science
This research is about investigating the third‐order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi‐biasing, input power, frequency and temperature‐dependent term; the TOI point and as well as the nonlinear distortion level are particular figures merit relevant to the third‐order intermodulation distortion (IMD 3 ) product. The primary results are the output referenced TOI reduced whereas the input referenced TOI raised as the frequency goes higher and the lower gated device exhibits a bit greater magnitude. Over the temperature range measured; the magnitude of TOI and nonlinear distortion considerably changed in accordance to the performance of third order intermodulation distortion (IMD3) component. This investigation of TOI is used to determine what extent distortion is generated, and comparing that to the entryway of the antenna provides a clear strategy for determining if the spec can be met or not. However, distortion level investigation is a critical point to choose the best biasing preference with the device's inlet measurements to establish a solution that fits with the intended usage.