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A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology
Author(s) -
Ahmadi Amirhossein,
Moazzen Hamidreza,
Karimzadeh Baee Roghieh,
Sardrood Parvin Sojoodi
Publication year - 2021
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22506
Subject(s) - amplifier , linearity , materials science , transistor , power added efficiency , rf power amplifier , fabrication , optoelectronics , power bandwidth , bandwidth (computing) , power (physics) , electrical engineering , linear amplifier , cmos , engineering , physics , telecommunications , voltage , medicine , alternative medicine , pathology , quantum mechanics
In this paper, the design, fabrication, and measurement results of a two‐stage X‐band highly efficient 50 W power amplifier are presented. In the design approach, two 0.25 μm bare‐die GaN on SiC transistors, where one of them has the largest gate periphery on the market, are chosen. A considerably high saturated power gain of more than 20 dB and better than 40% power‐added efficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulated measurements demonstrate an average output power of 40 W with good linearity specifications. Thermal assessment from measurement results ensures transistors' durability.