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An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting
Author(s) -
Majumdar Arijit,
Chatterjee Soumyo,
Chatterjee Sayan,
Chaudhari Sheli Sinha,
Poddar Dipak Ranjan
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22434
Subject(s) - high electron mobility transistor , signal (programming language) , materials science , optoelectronics , biological system , electronic engineering , computer science , transistor , electrical engineering , engineering , biology , voltage , programming language
In this article, ambient temperature effect on small signal model of AlGaN/GaN HEMT has been explored. Based on the study, an analytical method to understand the ambient temperature dependence on device behavior has been developed. Effectiveness of the proposed method has been illustrated through comparison with measured data. Moreover, comparison with other analytical methods has also been carried out illustrating its acceptability threshold.