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Widely separated dual‐band half‐mode SIW bandpass filter
Author(s) -
Pelluri Sambaiah,
Kartikeyan M.V.
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22360
Subject(s) - passband , band pass filter , center frequency , resonator , materials science , filter (signal processing) , attenuation , physics , acoustics , optoelectronics , optics , engineering , electrical engineering
A novel half‐mode substrate integrated waveguide (HMSIW) based dual‐band bandpass filter (DBBPF) is proposed. Back to back connected two defected ground structure (DGS) resonators on the top layer of HMSIW cavity constitute the passband with two transmission zeros (TZs) at a lower frequency. The higher modes TE 301 and TE 302 of HMSIW cavity give the passband response at higher frequency using the mode shifting technique with slot perturbation. The source‐load coupling has been used to create finite frequency TZs to improve the selectivity of the second passband. Therefore, the proposed filter gives two widely separated passbands, center frequencies (CFs) at 5.83 and 18.1 GHz with an attenuation of greater than 10 dB between the passbands. The synthesized filter is fabricated using a low‐cost single layer PCB process, and the measured S ‐parameters are almost mimic the EM‐simulation results.