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Investigation on harmonic spur characteristics of hybrid integrated LDMOS and AlGaN / GaN power amplifiers at different temperatures
Author(s) -
Wang Ruizhen,
Yang Xing,
Zhou Liang,
Xie Hao,
Wang Dawei,
Yin WenYan
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22345
Subject(s) - ldmos , dbc , amplifier , materials science , high electron mobility transistor , power (physics) , harmonic , optoelectronics , rf power amplifier , dbm , electrical engineering , transistor , engineering , physics , acoustics , voltage , cmos , quantum mechanics
The harmonic spur characteristics of a hybrid integrated S‐band power amplifier (PA), consisting of both stages of LDMOSFET and AlGaN/GaN HEMT, are studied at different temperatures. The PA offers a peak output power of 50 dBm (100 W) with power added efficiency higher than 50%, and adjacent channel power ratio performance is less than −30 dBc. A temperature test chamber is employed for measuring the harmonic spur of PA from 233 to 393 K, and its linear response to temperature is captured at high output power level.

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