Premium
High‐efficiency balanced power amplifier using miniaturized harmonics suppressed coupler
Author(s) -
Hookari Mohsen,
Roshani Saeed,
Roshani Sobhan
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22252
Subject(s) - amplifier , high electron mobility transistor , resonator , materials science , power added efficiency , optoelectronics , harmonics , electrical engineering , power dividers and directional couplers , harmonic , power (physics) , substrate (aquarium) , hybrid coupler , rf power amplifier , transistor , engineering , physics , acoustics , voltage , cmos , quantum mechanics , oceanography , geology
A novel balanced power amplifier (BPA) using compact coupler with rhombus resonators is presented. In this design, a new method is presented to analyze the proposed rhombus‐shaped resonator based on the LC equivalent circuit. A new class F power amplifier is designed to improve performances of the BPA. The results show that the performance of the proposed BPA is improved by using the proposed harmonic suppressed coupler at the design structure. The designed BPA operates at 1.25 GHz and delivers 29 dB output power with a gain of 17.9 dB and drain efficiency (DE) of 65.2%. The presented BPA is realized using ATF‐34143 transistors in GaAs pHEMT technology and fabricated on the RT/Duroid 5880 substrate with a thickness of 31 mil.