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On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates
Author(s) -
Jarndal Anwar,
Arivazhagan L.,
Nirmal D.
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22196
Subject(s) - materials science , silicon carbide , high electron mobility transistor , optoelectronics , diamond , dislocation , wide bandgap semiconductor , silicon , heterojunction , transistor , gallium nitride , thermal , composite material , electrical engineering , layer (electronics) , physics , voltage , meteorology , engineering
Abstract In this article, threading dislocations and its impact on the electrical and thermal performance of GaN‐on‐Diamond (Dia), ‐SiC, and ‐Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN‐HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia interface. It has been found that, the dislocations not only induce traps, but also degrade the thermal conductivity of the GaN‐buffer. This accordingly could deteriorate the thermal characteristic of GaN‐on‐Dia, which has higher lattice mismatch with respect to GaN‐on‐SiC. This investigation showed that the growth process of GaN‐on‐Dia should be optimized in order to reduce the threading dislocations. This accordingly could dramatically further improve its outstanding thermal characteristics with respect to GaN‐on‐SiC and GaN‐on‐Si devices.