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High‐efficiency broadband GaN HEMT power amplifier based on harmonic‐tuned matching approach
Author(s) -
Liu Guohua,
Li Sudong,
Cheng Zhiqun,
Feng Han,
Dong Zhihua
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22097
Subject(s) - amplifier , power bandwidth , rf power amplifier , linear amplifier , power added efficiency , direct coupled amplifier , harmonics , high electron mobility transistor , electrical engineering , broadband , electronic engineering , bandwidth (computing) , transistor , engineering , operational amplifier , telecommunications , voltage
A new type of broadband class‐F power amplifier is proposed with GaN HEMT device CGH40010F. And a new harmonic control network is designed by improving the traditional harmonic control network, with the second harmonic and third harmonic broadband matched, which effectively solves the problem of class‐F power amplifier in the design of the bandwidth. To improve the efficiency of power amplifier, all high‐order harmonics are controlled in a certain bandwidth. CGH40010F power transistor is utilized to build the power amplifier working from 1.5 to 2.6 GHz, with the measured saturated output power >10 W, drain efficiency 60%‐80%, and gain >10 dB. The second and the third harmonic suppression levels are maintained from −19.13 to −47.44 dBc and from −16.18 to −47.9 dBc, respectively. The simulation and measurement results of the proposed power amplifier show good consistency.