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A HEMT large‐signal model for use in the design of microwave switching circuits
Author(s) -
Tao Yuan,
Hu Zhi Fu,
Fan Yong
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22078
Subject(s) - subthreshold conduction , capacitance , signal (programming language) , large signal model , superposition principle , harmonics , nonlinear system , electronic circuit , electronic engineering , small signal model , voltage , computer science , electrical engineering , physics , transistor , engineering , electrode , quantum mechanics , programming language
The nonlinear sources of switch‐HEMTs have been well analyzed by using the measured data. The small signal intrinsic capacitances (under both positive and negative Vdsoperation) have been extracted by an extended small signal model. one‐dimension capacitance model has been effectively applied to model the small signal incremental capacitances directly extracted from the key operation region, which has also automatically taken into account the surface trapping effects. A new capacitance model has been effectively proposed to well fit the key nonlinear source (the deep subthreshold capacitance) of switch‐HEMTs. Simple switching function and additional voltage dependence have been applied to model the wide linear‐region (from high‐ Vgsregion to deep subthreshold region) of channel current. On/off state small signal insertion loss, small signal isolation, weak harmonics, and power carrying capabilities are accurately predicted by the large signal model. The model shows very good convergence of circuit simulation. Meanwhile, the simple equations and distinguishing among the capacitances accurately make the scaling rules simple and accurate.