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Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
Author(s) -
Augustine Fletcher A. S.,
Nirmal D.,
Arivazhagan L.,
Ajayan J.,
Varghese Arathy
Publication year - 2020
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.22040
Subject(s) - high electron mobility transistor , transconductance , breakdown voltage , optoelectronics , materials science , figure of merit , subthreshold slope , subthreshold conduction , capacitance , voltage , threshold voltage , transistor , electrical engineering , chemistry , electrode , engineering
The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate (DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent confinement of electrons toward the GaN channel, resulting very low subthreshold drain current of 10 −8 A/mm. It reveals very high off state breakdown voltage (BV) of 342 V for 250 nm gate technology HEMT. The breakdown voltage achieved for the proposed HEMT is 23% higher when compared to the breakdown voltage of conventional field plate HEMT device. In addition, the DFP reduces the gate capacitance (C G ) from 12.04 × 10 −13 to 10.48 × 10 −13 F/mm. Furthermore, the drain current and transconductance (g m ) reported for the proposed HEMT device are 0.82 A/mm and 314 mS/mm, respectively. Besides, the cut‐off frequency (f T ) exhibited for the proposed HEMT is 28 GHz. Moreover, the proposed HEMT records the highest Johnson figure of merit (JFOM) of 9.57 THz‐V for 250 nm gate technology without incorporating T‐gate.