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Special issue on GaN HEMT modeling and circuits
Author(s) -
Chen Wenhua,
Rawat Karun,
Ma Rui
Publication year - 2018
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.21540
Subject(s) - high electron mobility transistor , library science , citation , computer science , engineering , electrical engineering , transistor , voltage
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