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Pulsed I / V and S ‐parameters measurement system for isodynamic characterization of power GaN HEMT transistors
Author(s) -
Gonçalves Cristiano F.,
Nunes Luís Cótimos,
Cabral Pedro M.,
Pedro José C.
Publication year - 2018
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.21515
Subject(s) - high electron mobility transistor , transistor , waveform , power (physics) , characterization (materials science) , power semiconductor device , materials science , optoelectronics , electrical engineering , gallium nitride , voltage , electronic engineering , engineering , physics , quantum mechanics , composite material , layer (electronics) , nanotechnology
This article presents a system capable of performing isodynamic I / V and S ‐parameter measurements. It is focused on the necessary characterization signals, laboratory equipment, and pulser (power head). Proper biasing waveforms are developed and used to extract accurate nonlinear measurements that take into account the frequency dispersive phenomena, namely, the drain lag and temperature rise observed in GaN HEMTs. The pulser can drive high power devices (120 V and 45 A) for very fast and accurate pulses (widths between 300 and 800 ns). As validation, a commercial 15 W GaN device (CGH27015P) from Wolfspeed was characterized using this setup. The consistency between the obtained pulsed I / V curves and others obtained by the integration of the small signal transcondutance ( g m ) and output conductance ( g ds ) proves that the presented system is capable of performing isodynamic characterization of power transistors.