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Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study
Author(s) -
Ghosh Joydeep,
Saha Dipankar,
Ganguly Swaroop,
Laha Apurba
Publication year - 2018
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.21455
Subject(s) - heterojunction , high electron mobility transistor , materials science , fermi gas , valence band , condensed matter physics , charge density , optoelectronics , surface (topology) , wide bandgap semiconductor , electron , physics , band gap , transistor , voltage , quantum mechanics , geometry , mathematics
In this article, we present a physics‐based model to explain the effect of the GaN cap layers on the 2D electron gas density and the bare surface barrier height in AlGaN/GaN heterostructures. We consider that the 2DEG originates from the surface donor states present on the GaN cap top surface. The influence of a 2D hole gas, formed when the valence band crosses the Fermi energy level, has also been considered. This model agrees well with the published experimental results and TCAD simulations, and can easily be incorporated into the modeling of GaN/AlGaN/GaN‐based HEMT devices.