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High power‐handling SPDT switch in 0.25‐µm GaN technology
Author(s) -
Polli G.,
Palomba M.,
Colangeli S.,
Ciccognani W.,
Salvucci A.,
Vittori M.,
Limiti E.
Publication year - 2018
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.21413
Subject(s) - insertion loss , power (physics) , electrical engineering , dbm , isolation (microbiology) , electronic engineering , computer science , materials science , telecommunications , embedded system , engineering , physics , cmos , quantum mechanics , amplifier , microbiology and biotechnology , biology
An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31‐dB isolation together with an insertion loss less than 0.5 dB both in Rx‐ and Tx‐mode.

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