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Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT
Author(s) -
Amarnath G.,
Panda D. K.,
Lenka T. R.
Publication year - 2018
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.21179
Subject(s) - equivalent circuit , materials science , microwave , small signal model , transistor , signal (programming language) , scattering parameters , electronic engineering , gallium nitride , optoelectronics , computer science , electrical engineering , engineering , nanotechnology , layer (electronics) , telecommunications , voltage , programming language
This article presents an accurate and efficient extraction procedure for microwave frequency small‐signal equivalent circuit parameters of AlInN/GaN metal‐oxide‐semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer‐aided modeling approach. The S‐, Y‐, and Z‐ parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y‐ and Z‐ parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch‐off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de‐embedding the extrinsic parameters. S‐parameter simulation of the developed small‐signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small‐signal parameters to minimize the error between developed SSEC model and device simulation based s‐parameters. The microwave characteristics of optimized SSEC model is carried out ( f T  = 169 GHz and f max  = 182 GHz) and compared with experimental data available from literature to validate the model.

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