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An ultrawideband SPST switch using defected ground structure low pass filter in 65‐ nm CMOS technology
Author(s) -
Anak Agung Alit Apriyana,
Zhang Yue Ping,
Lim Wei Meng
Publication year - 2015
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20912
Subject(s) - cmos , band pass filter , microwave , electronic engineering , electrical engineering , filter (signal processing) , insertion loss , low pass filter , computer science , engineering , telecommunications
In this article, we propose a novel concept of applying a defected ground structure low pass filter (DGS LPF) to the design of switches. We highlight that the DGS structure has such advantages as consuming less silicon area and providing another degree of design freedom to optimize the switch performances. To prove the concept, we analyze, design, and characterize a single‐pole single‐throw (SPST) switch using a DGS LPF in 65‐nm CMOS technology. We show that the DGS LPF SPST switch with active size of 125 × 88 µm 2 can cover an ultrawideband from DC to 77 GHz. © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:758–768, 2015.