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An improved millimeter‐wave small‐signal modeling approach for HEMTs
Author(s) -
Shen Li,
Chen Bo,
Gao Jianjun
Publication year - 2014
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20787
Subject(s) - high electron mobility transistor , equivalent circuit , extremely high frequency , microwave , small signal model , electronic engineering , signal (programming language) , millimeter , large signal model , materials science , engineering , electrical engineering , physics , computer science , transistor , voltage , optics , telecommunications , programming language , power (physics) , quantum mechanics
An improved method to determine the small‐signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch‐off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system (agilent commercial circuit simulator) is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S ‐parameters is obtained for 2 × 20 μm 2 gate width HEMT up to 40 GHz. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:464–469, 2014.