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Stability investigation for InP DHBT mm‐wave power amplifier
Author(s) -
Yan Lei,
Johansen Tom Keinicke,
Kammersgaard Jacob
Publication year - 2013
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20702
Subject(s) - amplifier , heterojunction bipolar transistor , resistor , microwave , oscillation (cell signaling) , electrical engineering , transistor , optoelectronics , materials science , power (physics) , physics , electronic engineering , engineering , bipolar junction transistor , voltage , telecommunications , cmos , chemistry , biochemistry , quantum mechanics
In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K ‐Δ s pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE 23: 662–674, 2013.