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Modeling and parameter extraction of test fixtures for MOSFET on‐wafer measurements up to 60 GHz
Author(s) -
ÁlvarezBotero Germán,
TorresTorres Reydezel,
MurphyArteaga Roberto S.
Publication year - 2013
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20701
Subject(s) - wafer , mosfet , microwave , cmos , scattering parameters , transistor , materials science , electronic engineering , embedding , series (stratigraphy) , optoelectronics , engineering , electrical engineering , computer science , voltage , telecommunications , artificial intelligence , paleontology , biology
We present a circuit model and parameter determination methodology for test fixtures used for on‐wafer S‐parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and inductances due to the skin effect occurring in the metal pads. Physically based representations for this effect allow for excellent theory‐experiment correlations for different dummy structures, as well as when de‐embedding transistor measurements up to 60 GHz. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE 23: 655–661, 2013.