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Wideband model of on‐chip CMOS interconnects using space‐mapping technique
Author(s) -
Liu Xiaochang,
Wang Gaofeng,
Liu Jia
Publication year - 2011
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20534
Subject(s) - cmos , electronic engineering , wideband , computer science , generalization , artificial neural network , block (permutation group theory) , space mapping , equivalent circuit , chip , reliability (semiconductor) , radio frequency , algorithm , electrical engineering , engineering , artificial intelligence , telecommunications , mathematics , physics , mathematical analysis , power (physics) , geometry , quantum mechanics , voltage
Abstract A new wideband model for on‐chip complementary metal–oxide–semiconductor (CMOS) interconnects is developed by virtue of a space‐mapping neural network (SMNN) technique. In this approach, two subneural networks are used for improving the reliability and generalization ability of the model. This approach also presents a new methodology for data generation and training of the two neural networks. Two different structures are used for the two subneural networks to address different physical effects. Instead of the S parameters, the admittances of sub‐block neural networks are used as optimization targets for training so that different physical effects can be addressed individually. This model is capable of featuring frequency‐variant characteristics of radio‐frequency interconnects in terms of frequency‐independent circuit components with two subneural networks. In comparison with results from rigorous electromagnetic (EM) simulations, this SMNN model can achieve good accuracy with an average error less than 2% up to 40 GHz. Moreover, it has much enhanced learning and generalization capabilities and as fast as equivalent circuit while preserves the accuracy of detailed EM simulations. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.