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Bias‐dependent small‐signal modeling based on neuro‐space mapping for MOSFET
Author(s) -
Li Shoulin,
Cheng Jiali,
Han Bo,
Gao Jianjun
Publication year - 2011
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20502
Subject(s) - mosfet , space mapping , signal (programming language) , small signal model , microwave , range (aeronautics) , electronic engineering , space (punctuation) , physics , materials science , computer science , optoelectronics , computational physics , biological system , transistor , engineering , electrical engineering , telecommunications , voltage , biology , composite material , programming language , operating system
In this article, bias‐dependent small‐signal modeling approach based on neuro‐space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz–40 GHz confirming the validity and effectiveness of our approach. In addition, higher accuracy is achieved by our approach in contrast to conventional empirical model. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.