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Neuro‐space mapping‐based DC modeling for 130‐nm MOSFET
Author(s) -
Li Shoulin,
Han Bo,
Cheng Jiali,
Gao Jianjun
Publication year - 2010
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20469
Subject(s) - transconductance , mosfet , space mapping , microwave , space (punctuation) , conductance , electronic engineering , computer science , physics , electrical engineering , engineering , transistor , telecommunications , voltage , condensed matter physics , operating system
In this article, two approaches for modeling DC characteristics for MOSFET based on neuro‐space mapping (SM) are proposed. The first approach makes use of classical neuro‐SM technology, while the second combines neuro‐SM with prior knowledge input and source difference method. The formulas for obtaining the transconductance and output conductance in two approaches are derived. The I − V characteristics as well as their conductances obtained by the formulas in two approaches are compared to the measured data. Experimental results, which confirm the validity of our approaches, are also presented. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.