High isolation microstrip GaN‐HEMT Single‐FET Switch | Zendy

Ciccognani Walter | Zendy; Ferrari Mauro | Zendy; Limiti Ernesto | Zendy

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High isolation microstrip GaN‐HEMT Single‐FET Switch

Author(s) -

Ciccognani Walter,

Ferrari Mauro,

Limiti Ernesto

Publication year - 2010

Publication title -

international journal of rf and microwave computer‐aided engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.335

H-Index - 39

eISSN - 1099-047X

pISSN - 1096-4290

DOI - 10.1002/mmce.20443

Subject(s) - high electron mobility transistor , microwave , insertion loss , microstrip , optoelectronics , bandwidth (computing) , isolation (microbiology) , materials science , monolithic microwave integrated circuit , transmission line , electrical engineering , electronic engineering , topology (electrical circuits) , engineering , transistor , telecommunications , amplifier , voltage , microbiology and biotechnology , biology , cmos

In this contribution an analytical approach to the design of high‐isolation microwave transmission line‐resonated switches is presented. Simulated and measured performance of a GaN HEMT single‐FET switch cell topology and the one of a complete SPDT using the proposed approach are presented to demonstrate the approach feasibility and effectiveness. The resulting SPDT, operating at X Band, is featured by 1 dB insertion loss, isolation better than 37 dB all over the operating bandwidth and a power handling capability higher than 39 dBm. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.

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