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An impedance and power flow measurement system suitable for on‐wafer microwave device large‐signal characterization
Author(s) -
ElDeeb Walid S.,
Bensmida Souheil,
Boulejfen Noureddine,
Ghannouchi Fadhel M.
Publication year - 2010
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20434
Subject(s) - microwave , wafer , signal (programming language) , materials science , electrical engineering , electrical impedance , reflection (computer programming) , electronic engineering , characterization (materials science) , transistor , power (physics) , microwave power , optoelectronics , engineering , computer science , telecommunications , physics , nanotechnology , voltage , quantum mechanics , programming language
Abstract A reflection based and thru‐less de‐embedding technique for impedance and absolute power flow measurements suitable for on‐wafer large‐signal characterization of microwave transistors is proposed. The developed system was tested for both 50 Ω and non‐50 Ω terminated passive and active devices and the results obtained are compared with those obtained with commercial instruments. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.