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The AB‐C Doherty power amplifier. Part II: Validation
Author(s) -
Colantonio Paolo,
Giannini Franco,
Giofrè Rocco,
Piazzon Luca
Publication year - 2009
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20351
Subject(s) - amplifier , doherty amplifier , rf power amplifier , microwave , nonlinear system , power (physics) , class (philosophy) , direct coupled amplifier , electronic engineering , linear amplifier , electrical engineering , engineering , computer science , physics , telecommunications , operational amplifier , cmos , quantum mechanics , artificial intelligence
In part I, the complete theoretical (and nonlinear) analysis of a Doherty amplifier employing a Class AB bias condition for the Main Amplifier and a Class C one for the Auxiliary device has been presented. In this article, the experimental validation of the proposed theory is presented, describing the step‐by‐step procedure to be adopted when designing an AB‐C Doherty. The amplifier was realized at 2.14 GHz in hybrid form using two (0.5 μm, 1 mm gate periphery) GaN HEMTs. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.