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Dynamic biasing in SiGe HBT for wideband step envelope tracking power amplifiers
Author(s) -
Cidronali A.,
Magrini I.,
Fagotti R.,
Alimenti F.,
Mercanti M.,
Manes G.
Publication year - 2008
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20332
Subject(s) - predistortion , heterojunction bipolar transistor , amplifier , wideband , electronic engineering , power (physics) , biasing , electrical engineering , microwave , computer science , transistor array , envelope (radar) , rf power amplifier , engineering , telecommunications , transistor , voltage , physics , cmos , bipolar junction transistor , quantum mechanics , radar
This article investigates the use of reconfigurable class‐AB power amplifiers in wideband step envelope tracking (SET) architectures. The experimental results are related to a SiGe‐HBT power‐device prototype in which a dynamic switching capability has been integrated. The SET architecture is complemented by a digital predistortion algorithm and the resulting structure (circuit plus algorithm) is analyzed at system level. As a result, the SiGe prototype is capable to provide 20 dBm total output power with EVM = 5.1%. In the case of 802.11g and WCDMA signals the proposed approach gives a relative average PAE enhancement in excess of 46% with respect to traditional class‐AB RF power amplifiers. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.
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