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Wide‐band hybrid power amplifier design using GaN FETs
Author(s) -
Xiao D.,
Schreurs D.,
Van Niekerk C.,
De Raedt W.,
Derluyn J.,
Germain M.,
Nauwelaers B.,
Borghs G.
Publication year - 2008
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20329
Subject(s) - rf power amplifier , amplifier , fet amplifier , optoelectronics , transistor , power bandwidth , microwave , materials science , bandwidth (computing) , fabrication , electrical engineering , linear amplifier , power added efficiency , direct coupled amplifier , power (physics) , engineering , physics , operational amplifier , telecommunications , cmos , voltage , medicine , alternative medicine , pathology , quantum mechanics
In this article, the design, fabrication, and testing of a wide band single‐ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The single‐ended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.