Wide‐band hybrid power amplifier design using GaN FETs | Zendy

Xiao D. | Zendy; Schreurs D. | Zendy; Van Niekerk C. | Zendy; De Raedt W. | Zendy; Derluyn J. | Zendy; Germain M. | Zendy; Nauwelaers B. | Zendy; Borghs G. | Zendy

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Wide‐band hybrid power amplifier design using GaN FETs

Author(s) -

Xiao D.,

Schreurs D.,

Van Niekerk C.,

De Raedt W.,

Derluyn J.,

Germain M.,

Nauwelaers B.,

Borghs G.

Publication year - 2008

Publication title -

international journal of rf and microwave computer‐aided engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.335

H-Index - 39

eISSN - 1099-047X

pISSN - 1096-4290

DOI - 10.1002/mmce.20329

Subject(s) - rf power amplifier , amplifier , fet amplifier , optoelectronics , transistor , power bandwidth , microwave , materials science , bandwidth (computing) , fabrication , electrical engineering , linear amplifier , power added efficiency , direct coupled amplifier , power (physics) , engineering , physics , operational amplifier , telecommunications , cmos , voltage , medicine , alternative medicine , pathology , quantum mechanics

In this article, the design, fabrication, and testing of a wide band single‐ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The single‐ended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.

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