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Study of the influence of bias and matching networks on the distortion and memory of FET‐based power amplifiers
Author(s) -
Santiago Jon,
Portilla Joaquín,
Fernández Tomás
Publication year - 2008
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20327
Subject(s) - biasing , amplifier , electronic engineering , distortion (music) , matching (statistics) , fet amplifier , rf power amplifier , power (physics) , computer science , nonlinear distortion , transistor array , network topology , topology (electrical circuits) , electrical engineering , engineering , voltage , physics , mathematics , cmos , statistics , quantum mechanics , operating system
A study of the influence of bias and matching networks on the distortion and memory in FET‐based power amplifiers has been carried out at the device and amplifier circuit levels. The study includes simulated and experimental results that allow us to identify effects produced by the introduction of particular biasing and matching networks in the power amplifier design. The influence of the bias point, as well as of biasing and matching network topologies on the nonlinear, short‐ and long‐term memory behavior has been studied by means of simulations and measurements, using different power amplifier prototypes. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.