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A scalable advanced RF IC design‐oriented MOSFET model
Author(s) -
Bucher Matthias,
Bazigos Antonios,
Yoshitomi Sadayuki,
Itoh Nobuyuki
Publication year - 2008
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20288
Subject(s) - nmos logic , pmos logic , cmos , mosfet , electronic engineering , parasitic extraction , scalability , electrical engineering , microwave , radio frequency , engineering , computer science , transistor , voltage , telecommunications , database
This article presents a validation of the EKV3 MOSFET compact model dedicated to the design of analogue/RF ICs using advanced CMOS technology. The EKV3 model is compared with DC, CV and RF measurements up to 20 GHz of a 110 nm CMOS technology. The scaling behaviour over a large range of channel lengths and bias conditions is presented. Long‐channel devices show significant non‐quasi static effects while in short‐channel devices the parasitics modelling is critical. This is illustrated with Y‐parameters and f t vs. I D in NMOS and PMOS devices, showing good overall RF modelling abilities of the EKV3 MOSFET model. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.