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RF MEMS, BST, and GaAs varactor system‐level response in complex modulation systems
Author(s) -
Entesari Kamran,
Rebeiz Gabriel M.
Publication year - 2008
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20275
Subject(s) - tuner , varicap , materials science , intermodulation , radio frequency , optoelectronics , microelectromechanical systems , microwave , impedance matching , linearity , gallium arsenide , monolithic microwave integrated circuit , electrical engineering , rf power amplifier , electronic engineering , capacitance , electrical impedance , engineering , telecommunications , amplifier , physics , cmos , electrode , quantum mechanics
This article presents the response of RF microelectromechanical systems (RF MEMS), barium strontium titanate (BST), and gallium arsenide (GaAs)‐based tunable filters and reconfigurable matching networks to a wideband code‐division‐multiple‐access signal centered at 1.95 GHz. The RF MEMS tunable filter and impedance tuner result in very low intermodulation distortion and spectral regrowth compared to their BST and GaAs counterparts. The linearity of the BST and GaAs tunable networks improves considerably by using a series combination of BST and GaAs varactors, but the RF MEMS‐based networks still show the best linearity of all three technologies. Also, it is shown that the reconfigurable networks, tuned with capacitive RF MEMS can handle up to 1 W of RF power with no self‐actuation. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.