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A global electromagnetic modeling of an active microstrip structure
Author(s) -
Yeddes M.,
Zairi H.,
Gharsallah A.,
Gharbi A.,
Baudrant H.
Publication year - 2007
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20241
Subject(s) - mesfet , microstrip , amplifier , electronic engineering , monolithic microwave integrated circuit , microwave , nonlinear system , transistor , computer science , engineering , electrical engineering , physics , telecommunications , field effect transistor , cmos , quantum mechanics , voltage
This article presents a new technique that uses the auxiliary sources for investigation of structures including nonlinear components. The proposed technique is implemented in the iterative method to model two transistors (MESFET and INGFET) and an MMIC amplifier. The numerical results are compared with published data and a good agreement is observed. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.