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Design of active inductors in SiGe/SiGe:C processes for RF applications
Author(s) -
Chakravorty A.,
Scholz R. F.,
Senapati B.,
Garg R.,
Maiti C. K.
Publication year - 2007
Publication title -
international journal of rf and microwave computer‐aided engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.335
H-Index - 39
eISSN - 1099-047X
pISSN - 1096-4290
DOI - 10.1002/mmce.20233
Subject(s) - inductor , microwave , radio frequency , materials science , optoelectronics , port (circuit theory) , electrical engineering , electronic circuit , heterojunction , equivalent series resistance , equivalent circuit , electronic engineering , engineering , telecommunications , voltage
Applicability of silicon‐based heterojunction bipolar processes is investigated for designing active inductors with high quality factors ( Q ). Results for grounded type one‐port active inductor incorporating frequency‐dependent as well as frequency‐independent negative resistances are examined. Later, the negative resistance aspect is extended from one‐port to two‐port active inductor circuit to ensure its use as a series element. The enhanced Q ‐values of all the inductive circuits are observed in accordance with the theory. Moderately high‐ Q values (∼100) with considerable inductances (∼0.2–1 nH) are obtained in the RF frequency ranges (∼5–9 GHz). © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.